| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| AT73C224-A AT73C224-B AT73C224-E AT73C224-G AT73C2 |
Power Management and Analog Companions (PMAAC)
1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32
Ultra-low Power Real-time Clock (RTC) and Backup Battery Management
Activation of the Power Management Modules via Dedicated Enable Pin
|
聚兴科技股份有限公司
ATMEL Corporation
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| RMPA2271 |
WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| 2SA2067 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SC3942 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
